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Exploiting multiple percolation in two-terminal memristor to achieve a multitude of resistive states

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Citace článku v časopise:
FOULGER, Stephen H., Yuriy BANDERA, Benjamin GRANT, Jarmila VILČÁKOVÁ a Petr SÁHA. Exploiting multiple percolation in two-terminal memristor to achieve a multitude of resistive states. Journal of Materials Chemistry C [online]. 2021, vol. 9, iss. 28, s. 8975-8986. [cit. 2022-12-06]. ISSN 2050-7526. Dostupné z: https://pubs.rsc.org/en/content/articlelanding/2021/TC/D1TC00987G.

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