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Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

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Citace článku v časopise:
MANIŠ, Jaroslav, Jindřich MACH, Miroslav BARTOŠÍK, Tomáš ŠAMOŘIL, Michal HORÁK, Vojtěch ČALKOVSKÝ, David NEZVAL, Lukáš KACHTIK, Martin KONEČNÝ a Tomáš ŠIKOLA. Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions. Nanoscale Advances [online]. 2022, vol. 4, s. 3549-3556. [cit. 2024-07-25]. ISSN 2516-0230. Dostupné z: https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F.

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