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Thickness effect on structural defect-related density of states and crystallinity in P3HT thin films on ITO substrates

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dc.title Thickness effect on structural defect-related density of states and crystallinity in P3HT thin films on ITO substrates en
dc.contributor.author Nádaždy, Vojtech
dc.contributor.author Gmucová, Katarina
dc.contributor.author Nádaždy, Peter
dc.contributor.author Siffalovic, Peter
dc.contributor.author Vegso, Karol
dc.contributor.author Jergel, Matej
dc.contributor.author Schauer, František
dc.contributor.author Majková, Eva
dc.relation.ispartof Journal of Physical Chemistry C
dc.identifier.issn 1932-7447 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2018
utb.relation.volume 122
utb.relation.issue 11
dc.citation.spage 5881
dc.citation.epage 5887
dc.type article
dc.language.iso en
dc.publisher American Chemical Society
dc.identifier.doi 10.1021/acs.jpcc.7b11651
dc.relation.uri https://pubs.acs.org/doi/10.1021/acs.jpcc.7b11651
dc.description.abstract We report on a study of thickness effect on the formation of structural defect-related density of states (DOS) in the band gap of poly(3-hexylthiophene-2,5-diyl) (P3HT) thin films spincoated on ITO substrates. The energy-resolved electrochemical impedance spectroscopy and grazing-incidence wide-angle X-ray scattering were used to correlate the DOS with the degree of crystallinity in P3HT thin films. We found an exponential increase of the defect DOS in the band gap with increasing fraction of the amorphous phase when decreasing the film thickness. The exponent increases abruptly when reducing the thickness down to 30 nm, which indicates two thickness regions with different dynamics of the defect DOS formation driven by increasing the fraction of the amorphous phase. Moreover, we observed the co-existence of two P3HT polymorphic crystalline phases with different backbone spacings, which results in the appearance of a peculiar DOS satellite peak above the highest occupied molecular orbital. The volume of the minor, more dense, crystalline phase exhibits a thickness dependence with a maximum plateau around 40 nm. These results suggest an important effect of the substrate roughness on the crystallinity and polymorphism of P3HT thin films depending on the film thickness with general implications for polymer thin films. © 2018 American Chemical Society. en
utb.faculty Faculty of Applied Informatics
dc.identifier.uri http://hdl.handle.net/10563/1007818
utb.identifier.obdid 43879289
utb.identifier.scopus 2-s2.0-85044464516
utb.identifier.wok 000428356700006
utb.source j-scopus
dc.date.accessioned 2018-04-23T15:01:46Z
dc.date.available 2018-04-23T15:01:46Z
dc.description.sponsorship P3HT, SAS Institute; COFORD, Programme of Competitive Forestry Research for Development; APVV-0096-11, APVV, Agentúra na Podporu Výskumu a Vývoja; 2/0092/18; 1/0501/15; 2/0163/17; 26240220047; FEDER, European Regional Development Fund
dc.description.sponsorship Slovak Research and Development Agency [APVV-0096-11]; Scientific Grant Agency VEGA [1/0501/15, 2/0163/17, 2/0092/18]; Research and Development Operational Programme - ERDF [26240220047]
utb.contributor.internalauthor Schauer, František
utb.fulltext.affiliation Vojtech Nádaždy, † Katarína Gmucová, †,* Peter Nádaždy, † Peter Siffalovic,† Karol Vegso,† Matej Jergel,† Frantisek Schauer, ‡ and Eva Majkova† † Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 11 Bratislava, Slovak Republic ‡ Faculty of Applied Informatics, Tomas Bata University in Zlín, Nad Stráněmi 4511, 760 05 Zlín, Czech Republic AUTHOR INFORMATION Corresponding Author *E-mail: katarina.gmucova@savba.sk. Phone: +421220910762. ORCID Vojtech Nádaždy: 0000-0003-4127-5249 Katarína Gmucová: 0000-0003-4118-3336 Peter Siffalovic: 0000-0002-9807-0810 Matej Jergel: 0000-0002-4482-7881
utb.fulltext.dates -
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utb.fulltext.sponsorship The authors gratefully thank to P. Kalinay (Institute of Physics SAS, Bratislava) for the model of electrolyte penetration into P3HT given in the Supporting Information. This research was supported by the Slovak Research and Development Agency, project no. APVV-0096-11, the Scientific Grant Agency VEGA, projects nos. 1/0501/15, 2/0163/17, 2/0092/18, and the project Applied Research of Advanced Photovoltaic Cells, ITMS code 26240220047, supported by the Research and Development Operational Programme funded by ERDF.
utb.scopus.affiliation Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava, Slovakia; Faculty of Applied Informatics, Tomas Bata University in Zlín, Nad Stráněmi 4511, Zlín, Czech Republic
utb.fulltext.projects VEGA 1/0501/15
utb.fulltext.projects VEGA 2/0163/17
utb.fulltext.projects VEGA 2/0092/18
utb.fulltext.projects ITMS code 26240220047
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