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The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers

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dc.title The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers en
dc.contributor.author Kotěna, Jan
dc.contributor.author Minařík, Antonín
dc.contributor.author Wrzecionko, Erik
dc.contributor.author Smolka, Petr
dc.contributor.author Minaříková, Magda
dc.contributor.author Minařík, Martin
dc.contributor.author Mráček, Aleš
dc.contributor.author Kuřitka, Ivo
dc.contributor.author Machovský, Michal
dc.relation.ispartof Sensors and Actuators, A: Physical
dc.identifier.issn 0924-4247 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2017
utb.relation.volume 262
dc.citation.spage 1
dc.citation.epage 9
dc.type article
dc.language.iso en
dc.publisher Elsevier
dc.identifier.doi 10.1016/j.sna.2017.05.019
dc.relation.uri https://www.sciencedirect.com/science/article/pii/S092442471630646X
dc.subject Wet anisotropic etching en
dc.subject Silicon en
dc.subject Temperature gradients en
dc.subject Benard-Marangoni thermocapillar instability en
dc.subject Reflectivity en
dc.description.abstract A novel approach to wet etching of silicon wafers (100) is described in this study. Homogenous organized surface structures were prepared by the utilization of self-organized flow in the etching solution (Bénard-Marangoni thermocapillar instability). The driving force behind this process is a temperature gradient generated by the etching apparatus exclusively constructed for this research. The influences of temperature gradients (1–20 K) and etching time (20–55 min) were studied, with the potassium hydroxide/isopropyl alcohol etching solution. Obtained results indicate that self-organized flow can be utilized for specific and rapid etching, which allows significant variation of the topography and reflectivity of the silicon wafer surface textured in this way. © 2017 Elsevier B.V. en
utb.faculty Faculty of Technology
utb.faculty University Institute
dc.identifier.uri http://hdl.handle.net/10563/1007415
utb.identifier.obdid 43876565
utb.identifier.scopus 2-s2.0-85019872451
utb.identifier.wok 000404491900001
utb.identifier.coden SAAPE
utb.source j-scopus
dc.date.accessioned 2017-09-08T12:14:54Z
dc.date.available 2017-09-08T12:14:54Z
dc.description.sponsorship Ministry of Education, Youth and Sports of the Czech Republic - Program NPU I [LO1504]; TBU [IGA/FT/2015/014, IGA/FT/2016/013]
utb.ou Centre of Polymer Systems
utb.contributor.internalauthor Kotěna, Jan
utb.contributor.internalauthor Minařík, Antonín
utb.contributor.internalauthor Wrzecionko, Erik
utb.contributor.internalauthor Smolka, Petr
utb.contributor.internalauthor Minaříková, Magda
utb.contributor.internalauthor Minařík, Martin
utb.contributor.internalauthor Mráček, Aleš
utb.contributor.internalauthor Kuřitka, Ivo
utb.contributor.internalauthor Machovský, Michal
utb.scopus.affiliation Department of Physics and Materials Engineering, Tomas Bata University in Zlín, Vavrečkova 275, Zlín, Czech Republic; Centre of Polymer Systems, Tomas Bata University in Zlín, Třída Tomáše Bati 5678, Zlín, Czech Republic
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