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Conjugated silicon based polymer resists for nanotechnologies: EB and UV meditated degradation processes in polysilanes

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dc.title Conjugated silicon based polymer resists for nanotechnologies: EB and UV meditated degradation processes in polysilanes en
dc.contributor.author Schauer, František
dc.contributor.author Schauer, Petr
dc.contributor.author Kuřitka, Ivo
dc.contributor.author Bao, Hua
dc.relation.ispartof Materials Transactions
dc.identifier.issn 1345-9678 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2010
utb.relation.volume 51
utb.relation.issue 2
dc.citation.spage 197
dc.citation.epage 201
dc.type article
dc.language.iso en
dc.publisher The Japan Institute of Metals and Materials (JIM) en
dc.identifier.doi 10.2320/matertrans.MC200925
dc.relation.uri http://www.jstage.jst.go.jp/article/matertrans/51/2/51_197/_article
dc.subject UV degradability cs
dc.subject polysilany cs
dc.subject slabé vazby cs
dc.subject konformační defekty cs
dc.subject nanorezisty cs
dc.subject UV degradability en
dc.subject Polysilylenes en
dc.subject Weak bond en
dc.subject Conformation defect en
dc.subject nanorezists en
dc.description.abstract Srovnání odolnosti aryl-substituovaných polysilanů nadegradaci elektronovým svazkem (EB) a UV zářením je zkoumáno na prototypickém aryl - substituovanémT PMPSi .. Hlavním cílem této práce je srovnání fotoluminiscence a katodoluminiscence ( CL) po degradaci v dlouhovlné oblasti 400 ? 600 nm, kde jsme studovali volné vazby, konformační transformace a slabé vazby, vytvářené degradačním procesem. cs
dc.description.abstract The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400 ? 600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists. en
utb.faculty Faculty of Applied Informatics
dc.identifier.uri http://hdl.handle.net/10563/1001488
utb.identifier.rivid RIV/70883521:28140/10:63509541!RIV11-AV0-28140___
utb.identifier.obdid 43864582
utb.identifier.scopus 2-s2.0-77949710650
utb.identifier.wok 000276538900001
utb.source j-riv
utb.contributor.internalauthor Schauer, František
utb.contributor.internalauthor Kuřitka, Ivo
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