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Electrochemical Spectroscopic Methods for the Fine Band Gap Electronic Structure Mapping in Organic Semiconductors

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dc.title Electrochemical Spectroscopic Methods for the Fine Band Gap Electronic Structure Mapping in Organic Semiconductors en
dc.contributor.author Gmucová, Katarína
dc.contributor.author Nádaždy, Vojtech
dc.contributor.author Schauer, František
dc.contributor.author Kaiser, Michal
dc.contributor.author Majková, Eva
dc.relation.ispartof Journal of Physical Chemistry C
dc.identifier.issn 1932-7447 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2015
utb.relation.volume 119
utb.relation.issue 28
dc.citation.spage 15933
dc.citation.spage 15926
dc.citation.epage 15934
dc.type article
dc.language.iso en
dc.publisher American Chemical Society
dc.identifier.doi 10.1021/acs.jpcc.5b04378
dc.relation.uri http://pubs.acs.org/doi/full/10.1021/acs.jpcc.5b04378
dc.description.abstract Functionality of organic photonic devices is markedly influenced by the electronic band structure of the used materials. An easy and quick determination of the density of states function (DOS) in the whole energy range from HOMO to LUMO, including the presence of defect states in the band gap, is a prerequisite to a successful design of photonic devices. In this study we present the fine band gap electronic structure mapping in P3HT with two electrochemical spectroscopic methods: the energy-resolved electrochemical impedance spectroscopy (ER-EIS) and the kinetic sensitive voltcoulometry (VCM). We showed that the P3HT exposition to air results in the change of light-induced polaron states in the band gap. The electrochemically measured data are compared with those from the literature, obtained with combined optical spectroscopic methods, electrical methods, or first-principles calculations. The ER-EIS method has been shown as capable of providing valuable information on the DOS in the whole energy range from HOMO to LUMO, and the VCM method opens the possibility to study separately the charge transfer (redox) processes with different kinetics. © 2015 American Chemical Society. en
utb.faculty Faculty of Applied Informatics
dc.identifier.uri http://hdl.handle.net/10563/1005230
utb.identifier.obdid 43874904
utb.identifier.scopus 2-s2.0-84937142985
utb.identifier.wok 000358337700018
utb.source j-wok
dc.date.accessioned 2015-08-14T09:26:12Z
dc.date.available 2015-08-14T09:26:12Z
dc.description.sponsorship Slovak Research and Development Agency [APVV-0096-11]; Scientific Grant Agency VEGA [2/0165/13, 1/0501/15]
utb.contributor.internalauthor Schauer, František
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