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Grains of porous silicon embedded in SiO(2): Studies of optical gain and electroluminescence

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dc.title Grains of porous silicon embedded in SiO(2): Studies of optical gain and electroluminescence en
dc.contributor.author Dohnalová, Kateřina
dc.contributor.author Luterová, Kateřina
dc.contributor.author Valenta, Jan
dc.contributor.author Buršík, Jiří
dc.contributor.author Procházka, Michal
dc.contributor.author Křesálek, Vojtěch
dc.contributor.author Honerlage, Bernd
dc.contributor.author Pelant, Ivan
dc.relation.ispartof Functional Nanomaterials for Optoelectronics and Other Applications
dc.identifier.issn 1012-0394 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2004
utb.relation.volume 99-100
dc.citation.spage 31
dc.citation.epage 36
dc.event.title Symposium on Functional Nanomaterials for Optoelectronics and other Applications held at the 2003 E-MRS Fall Meeting
dc.event.location Warsaw
utb.event.state-en Poland
utb.event.state-cs Polsko
dc.event.sdate 2003-09-15
dc.event.edate 2003-09-19
dc.type article
dc.type conferenceObject
dc.language.iso en
dc.publisher Trans Tech Publications Inc. en
dc.identifier.doi 10.4028/www.scientific.net/SSP.99-100.31
dc.relation.uri http://www.scientific.net/SSP.99-100.31
dc.subject silicon nanocrystals en
dc.subject porous silicon en
dc.subject optical gain en
dc.subject electroluminescence en
dc.description.abstract Recent reports on experimental observation of optical gain in silicon nanostructures in the visible region, performed at several laboratories all over the world, have triggered an extraordinary surge of interest in silicon lasing. However, attempts aimed at reproducing the red stimulated emission from "standard" silicon nanocrystals (sized 3-5 nm) at some other laboratories either failed, or. did not come to definite conclusions. Therefore, more detailed measurements of optical gain in a wider variety of samples containing Si nanocrystals are required in order to unravel whether or not the observation of optical gain is an intrinsic property of Si nanocrystals. We have performed a detailed study of optical gain in layers of densely packed Si nanocrystals in SiO(2), prepared on the basis of porous Si, using the variable-stripe-length (VSL) method in combination with the shifted-excitation-spot (SES) method. In selected samples we have observed a distinct difference in behaviour between VSL and SES curves, indicating the occurrence of positive optical gain of similar to24 cm(-1). Preliminary reports on transport and electroluminescence measurements in thin films of SiO(2) doped with porous silicon grains, prepared by spin-coating technique, are also discussed. en
utb.faculty Faculty of Technology
dc.identifier.uri http://hdl.handle.net/10563/1001991
utb.identifier.scopus 2-s2.0-8644250635
utb.identifier.wok 000223533500005
utb.identifier.coden DDBPE
utb.source d-wok
dc.date.accessioned 2011-08-09T07:34:24Z
dc.date.available 2011-08-09T07:34:24Z
utb.contributor.internalauthor Procházka, Michal
utb.contributor.internalauthor Křesálek, Vojtěch
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