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UV degradabilita polysilanů pro nanorezisty zkoumaná elektronovými spektroskopiemi a fotoluminiscencí

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dc.title UV degradabilita polysilanů pro nanorezisty zkoumaná elektronovými spektroskopiemi a fotoluminiscencí cs
dc.title UV degradability of polysilanes for nanoresists examined by electron spectroscopies and photoluminescence en
dc.contributor.author Kuřitka, Ivo
dc.contributor.author Schauer, František
dc.contributor.author Sáha, Petr
dc.contributor.author Zemek, Josef
dc.contributor.author Jiříček, Petr
dc.contributor.author Nešpůrek, Stanislav
dc.relation.ispartof Czechoslovak Journal of Physics
dc.identifier.issn 0011-4626 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2006-01
utb.relation.volume 56
utb.relation.issue 1
dc.citation.spage 41
dc.citation.epage 50
dc.event.title 10th Symposium on Surface Physics
dc.event.location Prague
utb.event.state-en Czech Republic
utb.event.state-cs Česká republika
dc.event.sdate 2005-07-11
dc.event.edate 2005-07-15
dc.type article
dc.type conferenceObject
dc.language.iso en
dc.publisher Fyzikální ústav Akademie věd České republiky cs
dc.identifier.doi 10.1007/s10582-006-0064-z
dc.relation.uri http://www.springerlink.com/content/p3440x88x4320574/
dc.subject polysilane cs
dc.subject UV degradace cs
dc.subject fotoluminiscence cs
dc.subject fotoelektronová spektroskopie cs
dc.subject polysilane en
dc.subject UV degradation en
dc.subject photoluminiscence en
dc.subject photoelectron spectroscopy en
dc.description.abstract Úkolem studie je osvětlit degradační mechanismus polysilanů s hledem na hledání resistů pro křemíkové nanotechnologie. Byla použita kombinace metod UPS, XPS, Fluorimetrie. Je podán výklad mechanismu degradace cs
dc.description.abstract The aim of this study was to elucidate the degradation mechanisms in polysilanes, especially one-dimensional polysilylenes, with respect to the search for suitable resists for silicon industrial nanotechnologies. To this end we used the combined methods of photoelectron spectroscopies - PES (UPS and XPS) and photoluminescence - PL. Films of aryl-methyl-substituted polysilane chain, poly [methyl(phenyl)silylene] (PMPSi), prepared by casting from benzene solution, were analysed by X-ray and UV-induced photoelectron spectroscopy. Photoelectron spectra were recorded from the pristine PMPSi surface and after the UV photodegradation. Pronounced changes were found in the HeI induced photoelectron spectra indicating redistribution of filled Si 3s-like and Si 3p-like states. The photodegradation by UV radiation for two different degradation wavelengths lambda = 266 and 355 nm was examined also by PL. We concentrated on the PL study in the region of the sigma*-sigma excitonic deexcitation after major degradations, studying the disorder and dangling bonds (DB) created by the degradation process. The results of both complementary methods are interpreted in accordance with our recent paper [1], with the degradation process explained by two competing phenomena, i.e. the energy dependent exciton transport by diffusion process and Si-Si bond scission. en
utb.faculty Faculty of Technology
dc.identifier.uri http://hdl.handle.net/10563/1001956
utb.identifier.rivid RIV/70883521:28110/06:63504635
utb.identifier.obdid 14554861
utb.identifier.scopus 2-s2.0-33144473286
utb.identifier.wok 000235595400007
utb.source d-wok
dc.date.accessioned 2011-08-09T07:34:18Z
dc.date.available 2011-08-09T07:34:18Z
utb.contributor.internalauthor Kuřitka, Ivo
utb.contributor.internalauthor Schauer, František
utb.contributor.internalauthor Sáha, Petr
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