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Slabé vazby a přerušené vazby vytvořené UV v polysilanech

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dc.title Slabé vazby a přerušené vazby vytvořené UV v polysilanech cs
dc.title UV created weak and dangling bonds in aryl-substituted polysilylenes en
dc.contributor.author Schauer, František
dc.contributor.author Kuřitka, Ivo
dc.contributor.author Sáha, Petr
dc.contributor.author Nešpůrek, Stanislav
dc.contributor.author Lipson, Stephen
dc.relation.ispartof Journal of Non-Crystalline Solids
dc.identifier.issn 0022-3093 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2006-06-15
utb.relation.volume 352
utb.relation.issue 9-20
dc.citation.spage 1679
dc.citation.epage 1682
dc.event.title 21st International Conference on Amorphous and Nanocrystalline Semiconductors
dc.event.location Lisbon
utb.event.state-en Portugal
utb.event.state-cs Portugalsko
dc.event.sdate 2005-09-04
dc.event.edate 2005-09-09
dc.type article
dc.type conferenceObject
dc.language.iso en
dc.publisher Elsevier Science B.V. en
dc.identifier.doi 10.1016/j.jnoncrysol.2005.12.039
dc.relation.uri https://www.sciencedirect.com/science/article/pii/S0022309306002201
dc.subject polymery cs
dc.subject organické látky cs
dc.subject polymers en
dc.subject organics en
dc.description.abstract studie fotoluminiscence a UV degradace polysilanů, zejména s ohledem na slabé a přerušené vazby cs
dc.description.abstract The susceptibility of aryl-substituted polysilylanes to photodegradation by UV radiation is examined on the prototypical organosilicon polymers, poly[methyl(phenyl)silylene] (PMPSi) and poly[(biphenyl-4-yl)methylsilylene] (PBMSi). The main purpose of this work is to study photoluminescence (PL) after UV major degradation for two different degradation wavelengths 266 and 355 nm, predominantly in long wave range 400-600 nm, studying the disorder, dangling bonds (DB) and weak bonds (WB) created by the degradation process. We claim that the PL of the 500-600 nm band is related to the existence of WB on Si chain. Increase of the normalized PL 520-540 nm band after UV degradation can be then evaluated as the increase of the density of states (DOS) of WB. The efficiency of the WB creation in PMPSi is greater for 266 nm irradiation, supporting the notion of the suppressed exciton transport compared to the less energetical photon of 355 nm, where the WB creation is lowered due to the exciton migration to longer segments and/or already existing defects. For PBMSi the WB creation kinetics for 355 nm degradation is similar to that of PMPSi. The 266 nm degradation results then support the model calculations of DB and WB reconstruction in more rigid Si skeleton. (c) 2006 Elsevier B.V. All rights reserved. en
utb.faculty Faculty of Technology
dc.identifier.uri http://hdl.handle.net/10563/1001950
utb.identifier.rivid RIV/70883521:28110/06:63504653
utb.identifier.obdid 14554969
utb.identifier.scopus 2-s2.0-33744534397
utb.identifier.wok 000238782900195
utb.source d-wok
dc.date.accessioned 2011-08-09T07:34:17Z
dc.date.available 2011-08-09T07:34:17Z
utb.contributor.internalauthor Schauer, František
utb.contributor.internalauthor Kuřitka, Ivo
utb.contributor.internalauthor Sáha, Petr
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