Kontaktujte nás | Jazyk: čeština English
Název: | Characterization of epitaxial layers using scanning microwave microscopy |
Autor: | Martínek, Tomáš; Kudělka, Josef; Navrátil, Milan; Křesálek, Vojtěch |
Typ dokumentu: | Článek ve sborníku (English) |
Zdrojový dok.: | Annals of DAAAM and Proceedings of the International DAAAM Symposium. 2015, vol. 2015-January, p. 1109-1114 |
ISSN: | 1726-9679 (Sherpa/RoMEO, JCR) |
ISBN: | 978-3-902734-07-5 |
DOI: | https://doi.org/10.2507/26th.daaam.proceedings.156 |
Abstrakt: | In this article, atomic force microscopy and its variation scanning microwave microscopy were used for characterizatio of the epitaxial layers with different dopant doping levels specified by the manufacturing data. The vapour phase epitax was used for the deposition of individual layers on a silicon substrate. The measured data were visualized and compare with the manufacturing data. |
Plný text: | http://doi.org/10.2507/26th.daaam.proceedings.045 |
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