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Boosting the photoelectrochemical performance of Au/ZnO nanorods by co-occurring gradient doping and surface plasmon modification

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dc.title Boosting the photoelectrochemical performance of Au/ZnO nanorods by co-occurring gradient doping and surface plasmon modification en
dc.contributor.author Güler, Ali Can
dc.contributor.author Antoš, Jan
dc.contributor.author Masař, Milan
dc.contributor.author Urbánek, Michal
dc.contributor.author Machovský, Michal
dc.contributor.author Kuřitka, Ivo
dc.relation.ispartof International Journal of Molecular Sciences
dc.identifier.issn 1661-6596 Scopus Sources, Sherpa/RoMEO, JCR
dc.identifier.issn 1422-0067 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2023
utb.relation.volume 24
utb.relation.issue 1
dc.type article
dc.language.iso en
dc.publisher MDPI
dc.identifier.doi 10.3390/ijms24010443
dc.relation.uri https://www.mdpi.com/1422-0067/24/1/443
dc.subject photoelectrochemical en
dc.subject ZnO nanorods en
dc.subject Au nanoparticles en
dc.subject gradient doping en
dc.subject surface plasmon effect en
dc.description.abstract Band bending modification of metal/semiconductor hybrid nanostructures requires low-cost and effective designs in photoelectrochemical (PEC) water splitting. To this end, it is evinced that gradient doping of Au nanoparticles (NPs) inwards the ZnO nanorods (NRs) through thermal treatment facilitated faster transport of the photo-induced charge carriers. Systematic PEC measurements show that the resulting gradient Au-doped ZnO NRs yielded a photocurrent density of 0.009 mA/cm(2) at 1.1 V (vs. NHE), which is 2.5-fold and 8-fold improved compared to those of Au-sensitized ZnO and the as-prepared ZnO NRs, respectively. The IPCE and ABPE efficiency tests confirmed the boosted photoresponse of gradient Au-incorporated ZnO NRs, particularly in the visible spectrum due to the synergistic surface plasmonic effect of Au NPs. A gradient Au dopant profile promoted the separation and transfer of the photo-induced charge carriers at the electrolyte interface via more upward band bending according to the elaborated electrochemical impedance spectroscopy and Kelvin probe force microscopy analyses. Therefore, this research presents an economical and facile strategy for preparing gradient plasmonic noble NP-incorporated semiconductor NRs, which have excellent potential in energy conversion and storage technologies. en
utb.faculty University Institute
dc.identifier.uri http://hdl.handle.net/10563/1011364
utb.identifier.obdid 43884660
utb.identifier.scopus 2-s2.0-85145998512
utb.identifier.wok 000909759800001
utb.identifier.pubmed 36613884
utb.source j-scopus
dc.date.accessioned 2023-02-15T08:06:31Z
dc.date.available 2023-02-15T08:06:31Z
dc.description.sponsorship LTT20010; RP/CPS/2022/007; Tomas Bata University in Zlin, TBU
dc.description.sponsorship Ministry of Education, Youth and Sports of the Czech Republic DKRVO [RP/CPS/2022/007]; Ministry of Education, Youth and Sports of the Czech Republic INTER-EXCELLENCE [LTT20010]; Tomas Bata University in Zlin
dc.rights Attribution 4.0 International
dc.rights.uri https://creativecommons.org/licenses/by/4.0/
dc.rights.access openAccess
utb.ou Centre of Polymer Systems
utb.contributor.internalauthor Güler, Ali Can
utb.contributor.internalauthor Antoš, Jan
utb.contributor.internalauthor Masař, Milan
utb.contributor.internalauthor Urbánek, Michal
utb.contributor.internalauthor Machovský, Michal
utb.contributor.internalauthor Kuřitka, Ivo
utb.fulltext.sponsorship This research was funded by the Ministry of Education, Youth and Sports of the Czech Republic DKRVO (RP/CPS/2022/007) and INTER-EXCELLENCE (LTT20010). This work was supported by Tomas Bata University in Zlin.
utb.wos.affiliation [Guler, Ali Can; Antos, Jan; Masar, Milan; Urbanek, Michal; Machovsky, Michal; Kuritka, Ivo] Tomas Bata Univ Zlin, Ctr Polymer Syst, Tr T Bati 5678, Zlin 76001, Czech Republic
utb.scopus.affiliation Centre of Polymer Systems, Tomas Bata University in Zlin, Tr. T. Bati 5678, Zlin, 76001, Czech Republic
utb.fulltext.projects RP/CPS/2022/007
utb.fulltext.projects LTT20010
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Attribution 4.0 International Kromě případů, kde je uvedeno jinak, licence tohoto záznamu je Attribution 4.0 International